The work performed to date on the implantation of megaelectronvolt (MeV) energy ions of shallow donor (Si, S), shallow acceptor (Be), compensation (B, O, N, Fe, Co, Ti), and rare-earth (Er) species in III-V GaAs and InP compounds is reviewed. The optimum annealing conditions, the resulting carrier concentrations, and the lattice quality of the material are discussed. For the buried implants, the lattice damage and the electrical properties of the material are almost independent of the implant energy. For MeV Be/sup +/ implants the outdiffusion of Be during annealing is not observed, unlike in the case of shallow keV Be/sup +/ implants. The MeV energy Fe/sup +/ or Co/sup +/ implants performed at 200 degrees C into n-type InP, and Ti implants into p-type InP gave thermally stable buried high-resistance layers. The performance of microwave devices like vertical p-i-n, varactor, and mixer diodes and an optical device like a heterostructure laser made using MeV energy ion implantation is discussed. The results of MeV implantation in obtaining interdevice isolation of multilayer structures like HBTs are also discussed.>
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Mulpuri V. Rao (1993) studied this question.
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