The effects of post-implantation annealing have been studied in MeV Er-implanted GaAs by monitoring the Er3+ electron paramagnetic resonance (EPR) signal as well as the Er3+ and near-band-edge photoluminescence (PL) spectra as a function of the anneal temperature. Er3+ PL is observed from several distinct Er sites in the annealed material. In addition, the observed dependences upon anneal temperature suggest that the Er3+ PL is emitted from centers that are not in the Er3+ state at equilibrium. Absolute EPR measurements of the Er3+ concentration indicate that only a small fraction (<0.1%) of the Er in the sample is Er3+.
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Klein et al. (1991) studied this question.
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