We have successfully operated GaInNAs laser diodes with a pulsed current at room temperature. The lowest threshold current density was about 0.8 kA/cm2, and the lasing wavelength was about 1.2 µ m. Characteristic parameters such as internal quantum efficiency and the gain constant were measured, and excellent high-temperature performance was observed. The characteristic temperature was 127 K in the temperature range from 25 to 85° C.
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Kondow et al. (1996) studied this question.
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