Directly deposited nanocrystalline silicon thin-film transistors with ultra high mobilities

The authors report ultrahigh mobility nanocrystalline silicon thin-film transistors directly deposited by radio-frequency plasma enhanced chemical vapor deposition at 150°C. The transistors show maximum effective field effect mobilities of 450cm2∕Vs for electrons and 100cm2∕Vs for holes at room temperature. The authors argue that the key factor in their results is the reduction of the oxygen content, which acts as an accidental donor.