We present evidence that the band lineup at a semiconductor-semiconductor heterojunction interface can be changed and potentially controlled by an ultrathin metal intralayer. Synchrotron-radiation photoemission experiments demonstrate that 0.5–2-Å-thick Al intralayers increase the valence-band discontinuity of CdS-Ge and CdS-Si heterojunctions by 0.15 eV on the average.
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Niles et al. (1985) studied this question.
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