Bottom Electrode Modification of ZrO2 Resistive Switching Memory Device with Au Nanodots

The resistive switching properties of the ZrO2 memory devices with bottom electrode modification by using Au nanodots are investigated in this study. The regular arrays of Au nanodots are fabricated on Pt bottom electrode by nanosphere lithography. Due to the tip of the Au nanodots on the Pt bottom electrode, it causes the higher electric field within the ZrO2 film above the nanodots due to reduced effective film thickness and induces the localized conducting filaments easily. The operation parameters' variation for switching devices is, therefore, suppressed with lower operation voltage and resistance ratio. Long retention time (>106 s) and stubborn nondestructive readout test (>104 s) at room temperature and 150 °C are also demonstrated in this device.