Microcrystalline silicon: An emerging material for stable thin‐film transistors

Top‐gate and bottom‐gate microcrystalline‐silicon thin‐film transistors (TFTs) have been produced at low temperature (150–250°C) by the standard radio‐frequency glow‐discharge technique using three preparation methods: the hydrogen dilution of silane in hydrogen, the layer‐by‐layer technique, and the use of SiF4‐Ar‐H2 feedstock. In all cases, a stable top‐gate TFT with mobility values around 1 cm2/V‐sec have been achieved, making them suitable for basic circuit on glass applications. Moreover, the use of SiF4 gas combined with specific plasma treatments of the a‐SiN:H dielectric produces large columns, even at the interface with the dielectric. This leads to stable bottom‐gate TFTs, fully compatible with today's a‐Si:H production facilities, reaching mobility values up to 3 cm2/V‐sec. These devices are an interesting alternative to laser‐crystallized polysilicon thin films in a growing number of applications.