An improved MODFET microwave analysis

A recently proposed MODFET analysis is improved by presenting more accurate expressions for the MODFET admittance parameters. It is shown that the resulting parameters can improve the frequency range of validity by a factor of two over those recently presented, and that the latter represent a low-frequency approximation to the parameters given here. An equivalent circuit is presented for the MODFET that is valid up to twice the device cutoff frequency and contains no element with negative values.>