The resistivity and structure of films deposited on tantalum and rocksalt substrates by the electron beam evaporation of boron and the simultaneous bombardment of 30 keV N2 + ion beam were studied. From observation by transmission electron microscope, it was found that cubic boron nitride was produced in the case where the prepared composition rate of boron to nitrogen was 2.5.
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Satou et al. (1983) studied this question.