Ion implantation of diamond for electronic applications

Ion implantation studies on diamond have been reported for over 30 years. Initial claims of achieving doping in this way, probably related primarily to electrical effects caused by intrinsic radiation damage. Since then, a better understanding of defect creation and accumulation during ion implantation has emerged. This has made it possible to devise successful routes that enabled diamond to be doped p-type by boron-ion implantation. Limited success has also been achieved for phosphorus doping to generate n-type layers. Recent results indicate that it is possible to quench in shallow, metastable donor states using oxygen implantation. In this paper, an update is given on the present understanding of the inherent physical processes, and expected future trends when modifying the electronic properties of diamond by means of ion implantation.