Thermal properties and crystallization processes in semiconducting AlAsTe glasses

Glasses in the Al–As–Te system are prepared and characterized. DSC and X-ray studies of the crystallization are also performed. The kinetic parameters (activation energy and Avrami index) are obtained in non-isothermal conditions by a method previously described. Diffusion mechanisms are responsible for the crystallization and an activation energy of about 1.5 eV is found for the diffusion of Te. The Al content is shown to increase the stability of the glasses, while high Te content favours phase separation and As contributes to the structural rigidity in these compounds. The glass forming system is found to be of technological interest.