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The optical emission characteristics of highly strained InAs/InP single quantum wells prepared using atmospheric-pressure organometallic vapor-phase epitaxy have been studied. For well thicknesses of one to three monolayers (ML), the photoluminescence (PL) spectra exhibited intense emission in the energy range 1.15–1.3 eV, with typical full width at half maximum of 8–14 meV. The dependence of PL emission energy on well thickness for 1–5-ML-thick wells was compared with the results of a finite-well calculation, taking into account the effects of strain on the band structure. Good agreement between experiment and theory was obtained for a valence-band offset of 270 meV, consistent with recent reports for the InAs/InP system.
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Schneider et al. (1991) studied this question.
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