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InAs/GaAs highly strained short-period superlattices have been grown by migration-enhanced epitaxy on InP(001) substrates. Such samples exhibit clearly improved structural and optical properties. X-ray diffraction, scanning transmission electron microscopy, photoluminescence, and Raman scattering experiments have been performed to characterize an (InAs)4(GaAs)3 layer.
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Gérard et al. (1989) studied this question.
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