Synapse
⌘+K
Synapse
PulseExploreClubsResearchersJournals
Instagram
HomeClubsExplore
January 1, 1994Japanese Journal of Applied Physics

Mechanism of Multiatomic Step Formation during Metalorganic Chemical Vapor deposition Growth of GaAs on (001) Vicinal Surface Studied by Atomic Force Microscopy

View Full Paper
Ask AI
Bookmark
Share

Authors

JIJun-ya IshizakiSGShu GotoMKMotoya Kishida

Discussion

Loading...

Member takes

Overview

Key Points

Key points are not available for this paper at this time.

Cite This Study

Ishizaki et al. (1994) studied this question.

synapsesocial.com/papers/6a8b248feada60f85de3b5e7https://doi.org/10.1143/jjap.33.721
View Full Paper
Ask AI
Bookmark
Share

Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Investigation of the Decomposition Process of Ga Organometals in MOCVD by the Surface Photo-Absorption Method1990 · 35 citations
  2. 2In Situ Optical Monitoring of the GaAs Growth Process in MOCVD1990 · 56 citations
  3. 3Impurity-induced disordering in fractional-layer growth on a (001) vicinal surface by metalorganic chemical vapor deposition1990 · 12 citations
  4. 4Reflection high-energy electron diffraction oscillations from vicinal surfaces—a new approach to surface diffusion measurements1985 · 754 citations
  5. 5GaAs Quantum-Wire Laser Using Fractional Layer Superlattice1993 · 32 citations