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A detailed study of the 1.32 eV photoluminescence emission present in p-type GaAs was made at various temperatures and excitation intensities in conjunction with the effects of electron irradiation and infrared absorption measurements. The authors find that the binding energy of the acceptor responsible for the 1.32 eV emission is not the same as that of the Ga As - /Ga As -- transition as commonly believed. It is proposed instead that the acceptor responsible for this luminescence is a gallium antisite double acceptor-effective mass donor pair complex, Ga As -donor. The activation energy of this complex acceptor is determined to be approximately 197 meV.
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Yu et al. (1992) studied this question.
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