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December 1, 1997Journal of Applied Physics

Effect of preoxidation on deposition of thin gate-quality silicon oxide film at low temperature by using a sputter-type electron cyclotron resonance plasma

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Authors

DGDawei GaoYancheng Institute of TechnologyYKYasuhiro KashiwazakiKyushu UniversityKMK. MuraokaKyushu University

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Gao et al. (1997) studied this question.

synapsesocial.com/papers/6a8b257eb676b7d1a2fb588chttps://doi.org/10.1063/1.366431
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Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Electron Cyclotron Resonance Plasma Deposition Technique Using Raw Material Supply by Sputtering1984 · 132 citations
  2. 2Ion energy, ion flux, and ion mass effects on low-temperature silicon epitaxy using low-energy ion bombardment process1996 · 62 citations
  3. 3Low-temperature deposition of high-quality silicon dioxide by plasma-enhanced chemical vapor deposition1986 · 329 citations
  4. 4The Effects of Oxygen‐Argon Mixing on Properties of Sputtered Silicon Dioxide Films1987 · 31 citations
  5. 5Ultra-low-temperature growth of high-integrity gate oxide films by low-energy ion-assisted oxidation1994 · 60 citations