The effects of the average inversion-layer penetration, the inversion-layer centroid, on the inversion-charge density and the gate-to-channel capacitance have been analyzed. The quantum model has been used, and a variety of data have been obtained by self-consistently solving the Poisson and Schrodinger equations. An empirical expression for the centroid position that is valid for a wide range of electrical and technological variables has been obtained and has been applied to accurately model the inversion-layer density and capacitance.
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López‐Villanueva et al. (1997) studied this question.
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