Character of SiSiO2 interface states from analysis of the CV term spectra

CV-measurements provide term spectra for the SiSiO2 interface up to the band edges. The comparison of a huge amount of data with variations in specimen data and technology allows to describe the general shape of the N(E) distribution. The analysis of the N(E) curve in the neighbourhood of the band edges allows to discriminate different groups of states which make up the continuous N(E) distribution. The results may be understood with dangling bonds and bond distortions as the two groups of “intrinsic” states which are built up by pairs of binding—nonbinding states. A further group of “extrinsic” states with Gaussian distributions exists occasionally and is perhaps connected with impurities. This composition of interface states from groups of the given character allows to understand general properties and technological behaviour of the semiconductor-insulator interface.