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The authors report a spatial control of the band gap in InGaAs∕GaAs quantum dots (QDs) using the combined effects of pulsed excimer laser irradiation and impurity-free dielectric cap induced intermixing technique. A large band gap shift of up to 180meV has been obtained under laser irradiation of 480mJ∕cm2 and 150 pulses to the SiO2 capped shallow QD structure, while the nonirradiated SiO2 and SixNy capped QDs only exhibit band gap shifts of 18 and 91meV, respectively.
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Djie et al. (2006) studied this question.
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