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September 1, 1991IEEE Photonics Technology Letters

Metal-semiconductor-metal demultiplexing waveguide photodetectors in InGaAs/GaAs quantum well structures by selective bandgap tuning

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Authors

ACAnwesha ChoudhuryREVA UniversityPMP. MelmanBoston UniversityASA. Silletti

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Choudhury et al. (1991) studied this question.

synapsesocial.com/papers/6a8bca01f19228bbb2fb6020https://doi.org/10.1109/68.84504
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Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Effect of heat treatment on InGaAs/GaAs quantum wells1990 · 31 citations
  2. 2Spatially selective modification of GaAs/AlGaAs quantum wells by SiO2 capping and rapid thermal annealing1989 · 53 citations
  3. 3Band-Edge Electroabsorption in Quantum Well Structures: The Quantum-Confined Stark Effect1984 · 1,771 citations
  4. 4Two-wavelength demultiplexing p-i-n GaAs/AlAs photodetector using partially disordered multiple quantum well structures1989 · 14 citations
  5. 5Spectral and temporal characteristics of AlGaAs/GaAs superlattice p-i-n photodetectors1985 · 29 citations