Optical properties of quantum-size GaAs wire crystals grown by organometallic vapor-phase epitaxy (OMVPE) are measured. The typical size of the wire-shaped microcrystals is 1–5 μm long and 10–200 nm wide. Photoluminescence measurements at 4 K reveal spectral features dominated by free carrier to acceptor impurity recombination. A free exciton recombination line is also observed and is more intense relative to other features than that observed from a conventional OMVPE epitaxially grown layer. Small spectral shifts (0.5 meV) of the free exciton and the acceptor-bound exciton recombination lines are considered to be due to the effects of quantum confinement on the energy levels of the system.
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Morgan et al. (1991) studied this question.
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