Photoluminescence excitation of the 1.441 -eV cation antisite emission in p -type GaAs

Photoluminescence excitation spectra have been obtained at 4.2 K for the 1.441 -eV cation antisite double acceptor GaAs emission present in undoped p-type GaAs. The oscillating structures at above-band-gap energy can be attributed to the energy relaxation of the conduction-band electron by the successive emissions of the zone-center longitudinal phonon. The energy of the oscillatory periods shows that the 1.441 -eV emission at 4.2 K is primarily due to the neutral donor-acceptor pair transition involving the GaAs center.