A monolithic Si personal-communication system-CDMA power amplifier (PA) capable of delivering 28.2-dBm output power with 30% power-added efficiency and -45-dBc adjacent-channel-power ratio at 1.9 GHz and 3.6-V supply voltage is presented for the first time in this paper. The PA implemented in a 30-GHz BiCMOS process incorporates a novel impedance-controllable biasing scheme to control the class of operation and bias impedance of the output stage. Both simulated and measured results are presented for comparison.
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Luo et al. (2001) studied this question.
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