The radial variation in electrical and optical characteristics of Si-implanted InP:Fe wafer activated by rapid thermal annealing has been studied. The sheet carrier concentration (Ns) followed similar radial variation as etch pit density (EPD) whereas the photoluminescence (PL) intensity of C-Zn acceptor peak varied inversely with EPD. A maximum electron mobility of 2500 cm2/V s and electrical activation of 35% have been obtained for 3×1012 cm−2, 200 keV Si+ implants annealed for 15 s in the range 700–850 °C. A high intensity peak centered at 1.350 eV was also observed in the PL spectra of the samples and tentatively assigned to a Si-defect complex.
No takes yet. Share an insight, caveat, or question.
Mulpuri V. Rao (1986) studied this question.
Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context: