An InGaN-based horizontal-cavity surface-emitting laser diode (HCSELD) was fabricated by dry-etching of an InGaN-based multilayer on a SiC substrate and selective-area regrowth of a Mg-doped GaN layer. The InGaN-based HCSELD is a Fabry–Perot laser diode equipped with outer micromirrors that reflect the laser beams upward. The cavity mirrors and outer micromirrors are vertical {112̄0} and inclined {112̄2} facets of the regrown Mg-doped GaN layers, respectively. These grown facets are very smooth and had little angle misalignment. The InGaN-based HCSELD lased by current injection at room temperature. Current-injection lasing for group-III-nitride-based surface-emitting lasers is reported.
No takes yet. Share an insight, caveat, or question.
Akasaka et al. (2004) studied this question.
Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context: