Plasma-assisted low-pressure metalorganic chemical vapor deposition of GaN on GaAs substrates

Cubic and hexagonal GaN films were grown on (001) GaAs substrates by plasma-assisted low-pressure metalorganic chemical vapor deposition using triethylgallium and nitrogen radicals. The GaN growth rate was lower than that of GaAs and it was enhanced by simultaneous supply of hydrogen radicals to the growing surface. Cubic GaN was grown epitaxially under Ga-rich conditions, and c-axis oriented hexagonal GaN was grown under N-rich conditions.