a-Si1-xOx:H Films Prepared by Direct Photo-CVD Using CO2 Gas

Hydrogenated amorphous Si-O films (a-Si1-x O x :H) were prepared uisng direct photolysis of CO2 without Hg photosensitization. The films were characterized by IR absorption, ESR, electrical and optical measurements. C contamination was not detected by the IR measurement. Si dangling bonds were distributed homogeneously in the whole film, irrespective of the O-poor or O-rich region, in contrast to glow discharge-deposited a-Si1-x O x :H whose dangling bonds were mainly in the O-poor region. Photosensitivity of 103 was obtained even for the film with an optical gap as large as 2.4 eV.