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We have developed highly crystallized n-type microcrystalline Si layers as window layers for rear emitter Si heterojunction solar cells. We introduce a seed layer between an n-type microcrystalline Si layer and an intrinsic amorphous Si layer to improve the crystallinity of the n-type microcrystalline Si layer. By using this stacked layer instead of an n-type amorphous Si layer, the contact resistance between the n-type thin layer and In 2 O 3 :H is reduced without Al-doped ZnO. As a result, we obtain a high short-circuit current and a high fill factor simultaneously, and achieve a solar cell efficiency of 23.43%.
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Watahiki et al. (2015) studied this question.
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