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Long-term degradation of GaAs power MESFET's is shown to be surface induced. Using micro-Auger analysis (beam spot size ≃0.1-0.2 µm), we have identified a gallium outdiffusion induced by the SiO2surface protection deposition and a GaAs oxidation mechanism during electrical operation. These reactions modify the electrical surface properties in the access regions explaining the RF and dc performances degradation.
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Dumas et al. (1985) studied this question.
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