1.3 µm InAs/GaAs quantum-dot laser with low-threshold current density and negative characteristic temperature above room temperature

The combination of a high-growth-temperature GaAs spacer layer and p-type modulation doping has been utilised to obtain a low-threshold-current-density, high-temperature-stability 1.3 µm InAs/GaAs quantum-dot laser. A room-temperature threshold current density of 48 A/cm2 and a negative characteristic temperature over the temperature range from −50 to 40°C is achieved for a five-layer device with as-cleaved facets.