Synapse
⌘+K
Synapse
PulseExploreClubsResearchersJournals
Instagram
HomeClubsExplore
July 27, 2004Applied Physics Letters

Improved performance of 1.3μm multilayer InAs quantum-dot lasers using a high-growth-temperature GaAs spacer layer

View Full Paper
Ask AI
Bookmark
Share

Authors

HLHauyu Baobab LiuNational Taiwan Normal UniversityISIan R. SellersUniversity at Buffalo, State University of New YorkTBT. J. BadcockToshiba (Japan)

Discussion

Loading...

Member takes

Implication

Key Points

Key points are not available for this paper at this time.

Cite This Study

Liu et al. (2004) studied this question.

synapsesocial.com/papers/6a942dc49fbe5f86ceb95f05https://doi.org/10.1063/1.1776631
View Full Paper
Ask AI
Bookmark
Share

Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Efficient high-temperature CW lasing operationof oxide-confinedlong-wavelength InAs quantum dot lasers2000 · 79 citations
  2. 2Low-coherence interferometric measurements of the dispersion of multiple fiber Bragg gratings2001 · 78 citations
  3. 3The influence of heat treatment conditions on the evaporation of defect regions in structures with InGaAs quantum dots in the GaAs matrix2002 · 24 citations
  4. 4Optimizing the growth of 1.3 μm InAs/InGaAs dots-in-a-well structure2003 · 185 citations
  5. 51.3 µm GaAs-based laser using quantum dotsobtained byactivated spinodal decomposition1999 · 132 citations