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Scanning tunneling microscopy and spectroscopy are used to study InGaP∕GaAs heterojunctions with InGaAs-like interfaces. Band offsets are probed using conductance spectra, with tip-induced band bending accounted for using three-dimensional electrostatic potential simulations together with a planar computation of the tunnel current. Curve fitting of theory to experiment is performed. Using an InGaP band gap of 1.90eV, which is appropriate to the disordered InGaP alloy, a valence band offset of 0.38±0.01eV is deduced along with the corresponding conduction band offset of 0.10±0.01eV (type I band alignment).
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Feenstra et al. (2008) studied this question.
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