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Low-temperature photoluminescence (PL), PL excitation, and optically detected cyclotron resonance measurements are employed to determine band alignment in GaInNP∕GaAs heterostructures grown by gas-source molecular-beam epitaxy. The type II band alignment at the Ga0.46In0.54NxP1−x∕GaAs interface is concluded for the alloys with x⩾0.5% based on (i) highly efficient PL upconversion observed in the N containing samples and (ii) appearance of a near-infrared PL emission attributed to the spatially indirect type II transitions. Compositional dependence of the conduction band offset at the Ga1−yInyNxP1−x∕GaAs interface is also estimated.
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Izadifard et al. (2005) studied this question.
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