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Optically pumped laser action at a wavelength of 0.63 μm has been achieved at 77 K in InGaP/InGaAlP double heterostructures grown on (100) GaAs substrates by molecular beam epitaxy. The threshold pump power density was about 2.5 × 103 W/cm2
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Asahi et al. (1982) studied this question.
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