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We report scanning capacitance microscopy (SCM) images of a working p-channel metal–oxide–semiconductor field-effect transistor (P-MOSFET) during device operation. Independent bias voltages were applied to the source/gate/drain/well regions of the MOSFET during SCM imaging, and the effect of these voltages on the SCM images is discussed.
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Nakakura et al. (1999) studied this question.
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