Synapse
⌘+K
Synapse
PulseExploreClubsResearchersJournals
Instagram
HomeClubsExplore
December 1, 2002IEEE Electron Device Letters

Submicron AlGaN/GaN HEMTs with very high drain current density grown by plasma-assisted MBE on 6H-SiC

View Full Paper
Ask AI
Bookmark
Share

Authors

NWNils WeimannUniversity of Duisburg-EssenMMMichael J. ManfraPurdue University West LafayetteSCS. Chakraborty

Discussion

Loading...

Member takes

Implication

Key Points

Key points are not available for this paper at this time.

Cite This Study

Weimann et al. (2002) studied this question.

synapsesocial.com/papers/6a8c2879bc51310b2bdecdd2https://doi.org/10.1109/led.2002.806298
View Full Paper
Ask AI
Bookmark
Share

Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Evaluation of a 100 kV thermal field emission electron-beam nanolithography system2000 · 16 citations
  2. 2GaN HFETs on SiC Substrates Grown by Nitrogen Plasma MBE2001 · 2 citations
  3. 3GaN HFETs on SiC Substrates Grown by Nitrogen Plasma MBE2001 · 8 citations
  4. 4Schottky barrier engineering in III–V nitrides via the piezoelectric effect1998 · 145 citations
  5. 5An AlGaN/GaN high-electron-mobility transistor with an AlN sub-buffer layer2002 · 118 citations