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The controlled step bunching on GaAs (311)A oriented surfaces during growth by metalorganic vapor-phase epitaxy (MOVPE) leads to one-dimensional faceting with a lateral period tunable upon growth temperature and layer thickness in the mesoscopic size range 25–80 nm. The surface morphology established during MOVPE growth directly images the microscopic surface structure maintained during growth by conventional solid source molecular beam epitaxy (MBE) and allows us to control the lateral period in GaAs/AlGaAs wire-like heterostructures. The red shift of the luminescence at room temperature from these structures is directly correlated with the lateral period of faceting.
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Nötzel et al. (1994) studied this question.
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