Optimum conditions for preparing PbTiO3 films on Si and SrTiO3 substrates are investigated in the dual-beam vacuum evaporation method using PbO and TiO2. It has been found that tetragonal PbTiO3 films are formed on Si substrates at temperatures ranging from 550°C to 600°C, and that the stoichiometric composition of the films is easily obtained at 600°C by supplying excess PbO molecules to the substrate. It has also been found that PbTiO3 films grow epitaxially on SrTiO3 substrates at temperatures around 550°C.
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Ueno et al. (1992) studied this question.
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