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The authors report on InAs 1-x Sb x /InSb (x=0.83-0.81) strained-layer superlattice infrared detectors grown by metalorganic chemical vapour deposition. The long-wavelength photoresponse of these detectors demonstrates potential far-infrared applications for III-V superlattices. Examples of both photovoltaic and photoconductive detectors are described.
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Kurtz et al. (1990) studied this question.
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