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We have studied the effect of lattice mismatch on the electron mobilities of InAs films grown on GaAs by MBE. The electron mobilities decrease rapidly with decreasing film thickness in the range of 0.2–2 μm. This is attributed to the high density of dislocations observed in the thinner films. Using a step-grading growth technique, the dislocation density is reduced with a simultaneous improvement in mobilities.
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Chang et al. (1980) studied this question.
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