A High-Temperature Thermodynamic Model for Metalorganic Vapor Phase Epitaxial Growth of InGaN

A thermodynamic analysis tailored with a high-temperature parameter was performed for metalorganic vapor phase epitaxial (MOVPE) growth of In x Ga1-x N alloys. Accordingly, a series of InGaN samples were prepared under various input In flow rates and growth temperatures. Theoretical results indicate that the In solid concentration tends to increase with increasing In flow rate and with decreasing temperature, whereas the metal droplets form more easily on the surface at lower growth temperatures and higher In fluxes, which are in good agreement with our experimental data.