Growth of thick InGaN layers by tri-halide vapor phase epitaxy

This is the authors' abstract. We don't add key points for this paper.

This is the first study to report InGaN growth by tri-halide vapor phase epitaxy (THVPE) using InCl3 and GaCl3 generated by the reactions between metal sources (i.e., metallic indium and gallium) and gaseous chlorine. The influence of the surface orientation of the initial substrate on InGaN-THVPE growth was investigated using freestanding (0001) and GaN substrates. Only a N-polar InGaN epitaxial layer was obtained by THVPE because of the instability of GaCl3 adsorption toward nitrogen atoms on the Ga-polar surface. In addition, we investigated the influence of the group-III input partial pressure on the growth rate and solid composition of InGaN layers grown on a GaN substrate. The growth rate increased linearly with group-III concentration, and a maximum growth rate of 15.6 µm/h was achieved at P III = 2.0 × 10−3 atm.