A scattering matrix formalism is developed for the transport of electrons in heterostructures. It is shown how the approach may be used to calculate transport properties in superlattices and non-periodic devices. The formalism is applied, within an empirical pseudopotential model, to the calculation of tunnel junction fluxes through a GaAs/AlAs double barrier structure. When a comparison of the analysis to a conventional one-band effective-mass model is made, significant deviations between the two approaches are found to result.
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Marsh et al. (1986) studied this question.
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