Synapse
⌘+K
Synapse
PulseExploreClubsResearchersJournals
Instagram
HomeClubsExplore
October 24, 1994Applied Physics Letters

Determination of the GaN/AlN band offset via the (-/0) acceptor level of iron

View Full Paper
Ask AI
Bookmark
Share

Authors

JBJ. BaurInfineon Technologies (Germany)KMK. MaierUniversity of BonnMKM. KunzerFraunhofer Institute for Applied Solid State Physics

Discussion

Loading...

Member takes

Overview

Key Points

Key points are not available for this paper at this time.

Cite This Study

Baur et al. (1994) studied this question.

synapsesocial.com/papers/6a8c4f838e1e9543cdee2227https://doi.org/10.1063/1.112764
View Full Paper
Ask AI
Bookmark
Share

Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Optical transitions in GaAs:Fe studied by Fourier-transform infrared spectroscopy1992 · 26 citations
  2. 2Deep-Level Impurities: A Possible Guide to Prediction of Band-Edge Discontinuities in Semiconductor Heterojunctions1985 · 360 citations
  3. 3Acoustic deformation potentials and heterostructure band offsets in semiconductors1987 · 561 citations
  4. 4Iron Acceptors in Gallium Nitride (GaN)1993 · 52 citations
  5. 5The photoionisation cross section of deep-level impurities in semiconductors1980 · 55 citations