Electrical properties of 1.55 µm sensitive ion-irradiated InGaAs with subpicosecond carrier lifetime

Carrier lifetimes as short as 270 fs with carrier mobility of 200 cm2/V/s and good performances in terms of layer resistivity have been obtained from ion-irradiated InGaAs. The residual carrier concentration measured in Hall effect experiments was found to be weakly modified in spite of the high defect concentration created by the ion bombardment. Ion-irradiated InGaAs appears to be specially adapted to fast photoconductive devices operating at optical communication wavelengths.