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The persistent photoluminescence quenching effect of the 0.68-eV emission present in undoped semi-insulating GaAs has been studied in the temperature range 4--300 K. The temperature dependence of the spectral distribution for the quenching of the 0.68-eV emission and the thermal regeneration rate of the 0.68-eV emission from the metastable state to the normal state have been determined. The data are in agreement with the assignment of the 0.68-eV emission as a transition associated with the main deep donor EL2 center.
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P. W. Yu (1985) studied this question.
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