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The current filament phenomena in high gain gallium arsenide (GaAs) photoconductive semiconductor switches (PCSS) always draw a significant influence on the lifetime of the devices. This paper presents a study on the influence of the current filament over the material properties and output characteristics of the GaAs PCSS. The working principle of the current filaments has been analyzed and it is shown that the performance of GaAs PCSS degrades due to the heating effects of the current filaments. It is observed that the heating effect of current filament reduces the dark resistivity of the GaAs material; furthermore, it gradually damages electrode of PCSS, leading to the breakdown of PCSS. This paper presents the relationship between the turn-ON process and damage of the PCSS.
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Ma et al. (2014) studied this question.
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