1.3 μm strain-compensated InAsP/InGaP electroabsorption modulator structure grown by atmospheric pressure metal–organic vapor epitaxy

High quality 15-period strain-compensated InAsP/InGaP electroabsorption (EA) modulator structures have been grown by atmospheric pressure metal–organic vapor epitaxy. The incorporation of large compressive strain (∼1.7%) in the InAsP wells and tensile strain (∼−1.8%) in the InGaP barriers necessitated the growth of a few InP monolayers between the wells and barriers. The high structural quality of such samples has been demonstrated by (cross-sectional transmission electron microscopy analysis to be free of misfit dislocations and thickness undulations. The detection of a sharp and abrupt room-temperature exciton peak both in the photoconductivity and photoluminescence measurements further confirmed their excellent optical quality. 100 μm cavity length EA modulators fabricated in these structures exhibited excellent performances namely, an extinction ratio higher than 20 dB for 2.5 V drive voltage, a 3 dB bandwidth over 20 GHz, and low coupling losses to fiber (less than 2.5 dB per facet).