Fabrication of Deep-Ultraviolet-Light-Source Tube Using Si-Doped AlGaN

An ultraviolet (UV)-light-source tube using a Si-doped AlGaN film as a target of electron beam excitation was fabricated. The Si-doped AlGaN was grown on an AlN/sapphire substrate by low-pressure metalorganic vapor phase epitaxy (LP-MOVPE), and its optical properties were evaluated by excitation with a 10 kV electron beam (EB). Emission intensity was significantly improved by Si doping and optimization of the growth conditions. 247 nm deep-UV light was observed from the tube, and the lifetime of the light tube until 50% emission output of the initial strength was approximately 2000 h at an EB acceleration voltage of 10 kV with a current of 100 µA.