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Formation of PdSi has been obtained by implanting energetic Xe ions through a thin Pd (or Pd2Si) film on a Si substrate. The PdSi phase was found to form near the Pd2Si-Si interface from Rutherford backscattering measurements. Phase formation was confirmed by glancing-angle x-ray-diffraction analysis. Subsequent thermal annealing at 300–400 °C resulted in successive growth of the phase. A uniform PdSi layer was obtained at the final stage of the annealing and exhibited a sheet resistivity of 18 μΩ cm.
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Tsaur et al. (1979) studied this question.
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